ACE1522B
P-Channel Enhancement Mode Field Effect Transistor
Description Line current interrupter in telephone sets Relay...
ACE1522B
P-Channel Enhancement Mode Field Effect
Transistor
Description Line current interrupter in telephone sets Relay High speed and line transformer drivers.
Features
VDS(V)=-50V, ID=-0.13A RDS(ON)<10Ω@VGS=-5V Voltage controlled p-channel small signal switch High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage Gate-Source Voltage
VDS -50 V VGS ±20 V
Drain Current (Continuous) Drain Current (Pulse)
ID
-0.13 A
ID -0.52
Power Dissipation(1)
PD 0.35 W
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOT-23-3
Ordering information
ACE1522B XX + H
Halogen - free Pb - free BM : SOT-23-3
VER 1.2 1
ACE1522B
P-Channel Enhancement Mode Field Effect
Transistor
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
On/Off characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -50
V
Zero Gate Voltage Drain Current Gate Leakage Current
VDS=-50V, VGS=0V IDSS VDS=-50V, VGS=0V,
TJ=125℃ IGSS VGS=±20V, VDS=0V On characteristics b
-15 uA
-60
±10 nA
Static Drain-Source On-Resistance RDS(ON) VGS=-5V, ID=-0.1A
10 Ω
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=-1mA -0.8 -1.75
-2
V
Forward Transconductance
gFS VDS=-25V, ID=-0.1A Switching characteristics b
0.05
0.6
S
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
Turn-Off Fall Time
...