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BAT54ADW Dataheets PDF



Part Number BAT54ADW
Manufacturers SeCoS
Logo SeCoS
Description Surface Mount Schottky Barrier Diode Array
Datasheet BAT54ADW DatasheetBAT54ADW Datasheet (PDF)

Elektronische Bauelemente BAT54TW / BAT54ADW /BAT54CDW BAT54SDW/ BAT54BRW Surface Mount Schottky Barrier Diode Array FEATURES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free · Low Turn-on Voltage · Fast Switching · PN Junction Guard Ring for Transient and ESD Protection A BC MECHANICAL DATA · Case: SOT-363, Molded Plastic · Terminals: Solderable per MIL-STD-202, Method 208 · Polarity: See Diagrams Below · Weight: 0.016 grams (approx.) · Mounting Position: Any K J 4 .

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Elektronische Bauelemente BAT54TW / BAT54ADW /BAT54CDW BAT54SDW/ BAT54BRW Surface Mount Schottky Barrier Diode Array FEATURES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free · Low Turn-on Voltage · Fast Switching · PN Junction Guard Ring for Transient and ESD Protection A BC MECHANICAL DATA · Case: SOT-363, Molded Plastic · Terminals: Solderable per MIL-STD-202, Method 208 · Polarity: See Diagrams Below · Weight: 0.016 grams (approx.) · Mounting Position: Any K J 4 5 6O 3 2 1 H DF L M SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J ¾ 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 a 0° 8° All Dimensions in mm BAT54TW Marking: KLA BAT54ADW Marking: KL6 BAT54CDW Marking: KL7 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C VR PF Forward Current (DC) Junction Temperature IF TJ Storage Temperature Range Tstg BAT54SDW Marking: KL8 Value 30 225 1.8 200 Max 125 Max – 55 to +150 BAT54BRW Marking:KLB Unit Volts mW mW/°C mA °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) V(BR)R 30 — — Volts CT — 7.6 10 pF IR — 0.5 2.0 µAdc Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) VF — 0.22 0.24 Vdc VF — 0.41 0.5 Vdc VF — 0.52 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr — — 5.0 ns Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Current (DC) VF — 0.29 0.32 Vdc VF — 0.35 0.40 Vdc IF — — 200 mAdc Repetitive Peak Forward Current Non–Repetitive Peak Forward Current (t < 1.0 s) IFRM IFSM — — — 300 mAdc — 600 mAdc http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 IF, Forward Current (mA) IR, Reverse Current (µA) Elektronische Bauelemente BAT54TW / BAT54ADW /BAT54CDW BAT54SDW/ BAT54BRW Surface Mount Schottky Barrier Diode Array +10 V 820 Ω 2k 100 µH 0.1 µF IF 0.1 µF tr tp 10% t IF trr t 50 Ω Οutput Pulse Generator DUT 50 Ω Input 90% Sampling Oscilloscope VR Input Signal IR(REC) = 1 mA IR Output Pulse (IF = IR = 10 mA; measured at IR(REC) = 1 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 10 1 50°C 1000 TA = 150°C 100 10 TA = 125°C 1 25°C 1.0 85°C 25°C – 40°C – 55°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 VF, Forward Voltage (V) Figure 2. Forward Voltage 0.6 1.0 0.1 0.01 0.001 0 TA = 85°C 5 10 15 20 VR, Reverse Voltage (V) Figure 3. Leakage Current TA = 25°C 25 30 C T , Total Capacitance (pF) 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 VR, Reverse Voltage (V) Figure 4. Total Capacitance http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2 .


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