D2345

Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification s Features q High foward current transfer ratio hFE. q Low collector to emitter saturation voltage VCE(sat). q High emitter to base voltage VEBO. q Low noise voltage NV. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 50 40 15 100 50 125 125 –55 ~ +125 Unit V V V mA mA mW ˚C ˚C 0.2–+00..015 Unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 1 3 2 1.6±0.1 1.0±0.1 0.5 0.5 0.15–+00..015 0.75±0.15 0.45±0.1 0.3 0 to 0.1 0.2±0.1 1:Base 2:Emitter 3:Collector EIAJ:SC–75 SS–Mini Type Package Marking symbol : 1Z s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCB = 10V, IE = –2mA, f = 200MHz 50 40 15 400 100 nA 1 µA V V V 2000 0.05 0.2 V 120 MHz *hFE Rank classification Rank R S T hFE 400 ~ 800 600 ~ 1200 1000 ~ 2000 1 Collector output capacitance Cob...