BAS70-04T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes BAS70T/-04T/-05T/06T SCHOTTKY BARRIER DIODE FEATURES z Low Turn-on Voltage z Fast Switching SOT-523 BAS70T Marking: 7C BAS70-04T Marking: 7D BAS70-05T Marking: 7E MARKING: BAS707BAS70-047BAS70-057 BAS70-06T Marking: 7F BAS70-067 Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings @Ta=25℃ Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Symbol VRRM VRWM VR IFM Non-Repetitive Peak Forward Surge Current @ t = 8.3ms IFSM Power Dissipation Thermal Resistance Junction to Ambient PD RθJA Junction temperature Storage Temperature TJ TSTG ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Limit 70 70 100 150 667 125 -55~+150 Unit V mA mA mW ℃/W ℃ ℃ Parameter Reverse breakdown voltage Reverse voltage leakag e current Forward voltage Diode capacitance Reveres recovery time Symbol Test conditions V(BR) IR=10µA IR VR=50V VF IF=1mA IF=15mA CD VR=0, f=1MHz trr IF=IR=10mA,Irr=0.1xIR, RL=100Ω Min Max Unit 70 V 100 410 1000 2 nA mV pF 5 ns www.cj-elec.com 1 E,Oct,2015 Typical Characteristics FORWARD CURRENT I (mA) F REVERSE CURRENT I (nA) R T a =100 ℃ Forward Characteristics 70 Pulsed 10 T a =25℃ Reverse Characteristics 10000 Pulsed 1000 T =100 ℃ a 100 T =25 ℃ a 10 1 200 400 600 800 1000 FORWARD VOLTAGE V (...