JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Diodes
BAS40V SCHOTTKY BARRIER DIODE
FEA...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Diodes
BAS40V
SCHOTTKY BARRIER DIODE
FEATURES z Low Forward Voltage Drop z Fast Switching
Marking: KAN
Solid dot = Pin1 indicate.
SOT-563
654 1 23
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature range
Symbol
VRM VR IO Pd
RθJA
TJ TSTG
Limit
40 200 150
667 125 -55~+150
Unit
V mA mW
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V(BR)
IR= 10μA
40
Reverse voltage leakage current Forward voltage Total capacitance Reverse recovery time
IR VR=30V VF IF=1mA
IF=40mA CT VR=0,f=1MHz t r r IF=10mA, IR=IF=1mA
RL=100Ω
Max
200 380 1000
5 5
Unit V nA mV pF ns
www.cj-elec.com
1
E,Oct,2015
Typical Characteristics
FORWARD CURRENT I (mA) F
200
Pulsed
100
Forward Characteristics
T =100℃ a
10
1
T =25℃ a
0.1 0.0
0.2 0.4 0.6 0.8
FORWARD VOLTAGE V (V) F
1.0
Capacitance Characteristics
4.0
T =25℃ a
f=1MHz
3.5
3.0
2.5
2.0
1.5
1.0 0
5 10 15 20 25
REVERSE VOLTAGE V (V) R
30
POWER DISSIPATION P (W) D
REVERSE CURRENT I (uA) R
100
Pulsed
10
Reverse Characteristics
T =100℃ a
1
0.1
0.01
T =25℃ a
1E-3 0
10 20 30
REVERSE VOLTAGE V (V) R
Power Derating Curve
0.20
40
0.15
0.10
0.05
0.00 0
25 50 75 100
AMBIENT TEMPERATURE T (...