SSFT3904

Main Product Characteristics: VDSS RDS(on) 30V 2.6mΩ (typ.) ID 110A Features and Benefits: TO220  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSFT3904 Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.1mH② Avalanche Current @ L=0.1mH② Operating Junction and Storage Temperature Range Max. 110 80 440 100 0.55 30 ±20 320 80 -55 to + 175 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO., LTD. 2012.11.01 www.silikron.com Version: 2.5 page 1 of 8 SSFT3904 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — — — Max. 1.5 62 40 U...