BAS40-04T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 BAS40T/-04T/-05T/-06T SCHOTTKY BARRIER DIODE FEATURES z Low forward voltage z Fast switching BAS40T MARKING:43 MARKING: BAS40T BAS40-04T MARKING: 44 BAS40-05T MARKING: 45 BAS40-06T MARKING: 46 BAS40-04T BAS40-05 T BA S40-06 T Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings @Ta=25℃ Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking V oltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @ t = 8.3ms Power Dissipation Thermal Resistance Junction to Ambient Operating Junction Temperature Storage Temperature Electrical Characteristics @Ta=25℃ Parameter Reverse Breakdown Voltage Forward Voltage Reverse Current Diode Capacitance Symbol V (BR) VF1 VF2 IR CD Min 40 Reverse Recovery Time trr Symbol VRRM VRWM VR IFM IO IFSM PD RθJA TJ TSTG Limit 40 200 200 0.6 150 667 125 -55~+150 Unit V mA mA A mW ℃/W ℃ ℃ Typ Max Unit V 0.38 V 1V 0.2 μA 5 pF 5 ns Conditions IR=10μA IF=1mA IF=40mA VR=30V VR=0,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω www.cj-elec.com 1 E,Oct,2015 Typical Characteristics 100 Pulsed Forward Characteristics 10 =100℃ T a =25℃ FORWARD CURRENT I (mA) F 1 T a 0.1 0.01 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 REVERSE CURRENT I (nA) R 2000 1000 Pulsed Reverse Characteristics T =100℃ a 100 T =25℃ 10 a 1 0 10 20 30...