DAP202U

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode DAP202U SWITCHING DIODE FEATURES: z Four types of packaging are available z High speed z Suitable for high packing density layout z High reliability MARKING:P P P Solid dot = Green molding compound device, if none,the normal device. SOT-323 1 2 3 Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Average Rectified Output Current Power Dissipation Thermal resistance From Junction to ambient Junction Temperature Storage Temperature Range Symbol VRM VR IFM IFSM IO PD RθJA TJ TSTG Limit 80 80 300 2.0 100 200 625 150 -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol Test conditions V(BR) IR= 100μA IR VR=70V Min Max 80 0.1 Forward voltage Diode capacitance Reverse recovery time VF IF=100mA CD VR=6V, f=1MHz trr VR=6V, IF=5mA 1.2 3.5 4 Unit V V mA A mA mW ℃/W ℃ ℃ Unit V μA V pF ns www.cj-elec.com 1 C,Oct,2014 Typical Characteristics 100 Pulsed Forward Characteristics 10 1000 Pulsed Reverse Characteristics T =100℃ a 100 REVERSE CURRENT I (nA) R =100℃ =25℃ T a FORWARD CURRENT I (mA) F T a 1 10 T =25℃ a 0.1 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 1 0 20 40 60 80 REVERSE VOLTAGE V (V) R CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D...