Switching Diode
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAW567DW SWITCHING DIODE
FEATURES...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAW567DW SWITCHING DIODE
FEATURES z Fast Switching Speed z Ultra-Small Surface Mount Package z For General Purpose Switching Applications z High Conductance
MAKING: KAC
SOT-363
654 123
KAC
Solid dot = Pin1 indicate.
Maximum Ratings @Ta=25℃
Parameter Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = .Ps
Power Dissipation Thermal Resistance From Junction to Ambient Operating Junction Temperature Storage Temperature
Symbol VRRM VRWM VR IFM
IO
IFSM
PD
RθJA
TJ
TSTG
Limit
75
300 150
2 200 625 150 -55~+150
Unit
V
mA mA A mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current
Forward voltage Capacitance between terminals
Symbol V(BR)
IR
VF CT
Test conditions
IR= 2.5µA
VR=75V VR=20V IF=1mA IF=10mA IF=50mA IF=150mA
VR=0, f=1MHz
Min 75
Max
2.5 0.025 715 855 1000 1250
2
Unit V µA
mV
pF
www.cj-elec.com
1
C,Mar,2016
CAPACITANCE BETWEEN TERMINALS C (pF)
T
POWER DISSIPATION P (mW) D
FORWARD CURRENT I (mA) F
T a
=100℃
Typical Characteristics
Forward Characteristics
300
100
10
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE V (V) F
Capacitance Characteristics
1.1
T =25℃ a
f=1MHz
1.0
0.9
0.8
0.7
0.6 0 4 8 12 16 20
REVERSE VOLTAGE V (V) R
T a
=25℃
REV...
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