BAV70W

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 PLASTIC ENCAPSULATE SWITCHING DIODE BAV70W FEATURES * Power dissipation PD: 200 mW (Tamb=25OC) * Collector current IO: 150 * Collector - base voltage VR: 75 mA (Tamb=25OC) V * Operating and storage junction temperature range TJ,Tstg: -55OC to+150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.006 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. SOT-323 0.006(0.15) 0.003(0.08) 0.053(1.35) 0.045(1.15) 0.043(1.10) 0.035(0.90) REF 0.021(0.53) 0.004(0.10) 0.000(0.00) 0.016(0.40) 0.008(0.20) 0.055(1.40) 0.047(1.20) 0.096(2.45) 0.085(2.15) 0.087(2.20) 0.079(2.00) ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Reveres breakdown voltage (IR= 100mA) Reveres voltage leakage current (VR= 75V) SYMBOL V(BR) IR (IF= 1mA) (IF= 10mA) Forward voltage (IF= 50mA) (IF= 150mA) Diode capacitance(VR= 0V, f= 1MHz) Reveres recovery time (IF= IR= 10mA, Irr= 0.1 x IR, RL= 100W) VF CD trr Dimensions in inches and (millimeters) MIN TYP MAX UNITS 75 - -V - - 2.5 mA - - 715 - - 855 - - 1000 mV - - 1250 - - 2 PF - - 4 nS 2006-3 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other ch...