SWITCHING DIODE
Transys
Electronics
LIMITED
SOT-523 Plastic-Encapsulated Diodes
BAS16T/BAW56T/BAV70T/BAV99T
SWITCHING DIODE
FEATURES
...
Description
Transys
Electronics
LIMITED
SOT-523 Plastic-Encapsulated Diodes
BAS16T/BAW56T/BAV70T/BAV99T
SWITCHING DIODE
FEATURES
Power dissipation
PD: 150 mW (Tamb=25℃)
Forward Current
IF: Reverse Voltage
75 m A
VR: 85 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SOT-523
BAS16T Marking: A2 BAW56T Marking: JD
BAV70T Marking: JJ
BAV99T Marking: JE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current
Forward voltage
Diode capacitance Reverse recovery time
Symbol V(BR) IR1 IR2
VF
CD t rr
Test conditions
IR= 100µA
VR=75V
VR=25V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V, f=1MHz
MIN MAX
85
2
0.03 715 855 1000 1250 1.5
4
UNIT V
µA µA
mV
pF nS
Typical Characteristics
BAS16T/BAW56T/BAV70T/BAV99T
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