Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Diodes
MMBD4448V SWITCHING DIODE
FEATURES z Fast switching speed z High conductance
MARKING: KAL
SOT-563
654
KAL
Solid dot = Pin1 indicate.
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Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Unit
Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature
VRM VRRM VRWM
VR VR(RMS)
IFM IO IFSM
Pd
RθJA Tj
TSTG
100
80
57 500 250 2.0 150 833 150 -55~+150
V
V
V mA mA
A mW ℃/W ℃ ℃
Electrical Ratings @Ta=25℃
Parameter Reverse breakdown voltage
Forward voltage
Reverse current Capacitance between terminals Reverse recovery time
Symbol V (BR) VF1 VF2 VF3 VF4 IR1 IR2 CT
trr
Min Typ 80 0.62
Max Unit
V
0.72 0.855
V V
1.0 V
1.25 V
0.1 μA 25 nA
3.5 pF
4 ns
Conditions IR=2.5 μA IF=5mA IF=10mA IF=100mA IF=150mA VR=70V VR=20V
VR=6V,f=1MHz IF=IR=10mA
Irr=0.1XIR,RL=100Ω
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CAPACITANCE BETWEEN TERMINALS C T (pF)
POWER DISSIPATION P (mW) D
FORWARD CURRENT I (mA) F
T a
=100℃
Typical Characteristics
Forward Characteristics
500
100
10
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE V (V) F
Capacitance Characteristics
1.1
T =25℃ a
f=1MHz
1.0
0.9
0.8
0.7
0.6 0 4 8 12 16 20
REVERSE VOLTAGE V (V) R
T a
=25℃
REVERSE CURRENT I (nA) R
10000 1000
Reverse Characteristics
T =100℃ a
100
T =25℃ a
10
1 0
200
20 40 60 80
REVERSE VOLTAGE V (V) R
Power Derating Curve
100
150
100
50
0 0 25 50 75 100 125 150
AMBIENT TEMPERATURE T (℃) a
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SOT-563 Package Outline Dimensions
SOT-563 Suggested Pad Layout
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SOT-563 Tape and Reel
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