SSPR18N10

Elektronische Bauelemente SSPR18N10 18A , 100V , RDS(ON) 48 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSPR18N10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SPR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SPR-8PP FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 18N10 = Date code PACKAGE INFORMATION Package MPQ SPR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 3.25 3.40 3.05 3.25 3.20 3.40 3.00 3.20 0.65 BSC. 2.40 2.60 REF. G H I J K L Millimeter Min. Max. 1.35 1.55 0.24 0.35 1.13 REF. 0.30 0.50 0.10 0.20 0.70 0.90 SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1@VGS=10V TC=25°C TC=70°C Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 VDS VGS ID IDM EAS 100 ±20 18 11 52.1 26.6 Avalanche Current Power Dissipation 4 TC=25°C Operating Junction & Storage Temperature IAS PD TJ, TSTG 20 34.7 -55~150 Thermal Resistance Rating Thermal Resistance Junction-Ambient1(Max). Thermal Resistance Junction-Case1(Max). RθJA RθJC 50 3.6 Unit V V A A mJ A W °C °C / W °C / W http://www.SeCoS...