DAN217

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes DAN217 SWITCHING DIODE FEATURES z Small surface mounting type z Two diode elements are connected in series MARKING: BA1 BA1 BA1 Solid dot = Green molding compound device,if none,the normal device. Maximum Ratings @Ta=25℃ Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Average Rectified Output Current Power Dissipation Thermal resistance From Junction to ambient Junction Temperature Storage Temperature Range Symbol VRM VR IFM IFSM IO PD RθJA TJ TSTG SOT-23 - 1 3 2 Limit 80 80 300 2.0 100 200 625 150 -55~+150 Unit V V mA A mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reversen voltage leakage current Forward voltage Symbol V(BR) IR VF Test conditions IR= 100μA VR=70V IF=100mA Min 80 Max 0.1 1.2 Unit V μA V www.cj-elec.com 1 B,Oct,2014 FORWARD CURRENT I (mA) F Ta=100℃ Ta=25℃ REVERSE CURRENT I (nA) R Typical Characteristics Forward Characteristics 100 30 10 3 1 0.3 0.1 0.0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE V (V) F 1.2 1000 300 100 30 10 3 1 0 Reverse Characteristics Ta=100℃ Ta=25℃ 20 40 60 REVERSE VOLTAGE V (V) R 80 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Capacitance Characteristics 1.6 Ta=25℃ f=1MHz 1.4 1.2 1.0 0 5 10 15 20 REVERSE VOLTAGE V (V) R 300 250 200 150 100 50 0 ...