SWITCHING DIODE
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diode
DAN202U SWITCHING DIODE
FEATURES:
...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diode
DAN202U SWITCHING DIODE
FEATURES:
z Four types of packaging are available z High speed z Suitable for high packing density layout z High reliability
MARKING:N
SOT-323
1 3
2
N N Solid dot = Green molding compound device, if none,the normal device.
Maximum Ratings @Ta=25℃
Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Average Rectified Output Current Power Dissipation Thermal resistance From Junction to ambient Junction Temperature Storage Temperature Range
Symbol VRM VR IFM
IFSM IO PD RθJA
TJ TSTG
Limit 80 80 300
2.0 100 200 625 150 -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current
Symbol
Test conditions
V(BR)
IR= 100μA
IR VR=70V
Min 80
Forward voltage
VF IF=100mA
Diode capacitance Reverse recovery time
CD VR=6V, f=1MHz trr VR=6V, IF=5mA
Max
0.1 1.2 3.5 4
Unit V V
mA A mA mW ℃/W ℃ ℃
Unit V μA
V
pF ns
www.cj-elec.com
1
B,Oct,2014
Typical Characteristics
Forward Characteristics
100
=100℃
=25℃
T a
FORWARD CURRENT I (mA) F
30 10
T a
3 1
0.3
0.1 0.0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE V (V) F
1.2
REVERSE CURRENT I (nA) R
1000
300 100
30 10 3
1 0
Reverse Characteristics
T =100℃ a T =25℃ a
20 40 60
REVERSE VOLTAGE V (V) R
80
CAPACITANCE BETWEEN TERMINALS C (pF)
T
POWER DISSIPAT...
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