MRF555

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% (Typ) Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. MRF555 Power Macro ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Total Device Dissipation @ TC = 75ºC Derate above 75ºC MSC1316.PDF 10-25-99 Value 16 30 3.0 500 Unit Vdc Vdc Vdc mA 3.0 Watts 40 mW/ ºC MRF555 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol Test Conditions BVCEO BVCES BVEBO ICES HFE Collector-Emitter Breakdown Voltage (IC = 5 mAdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) DC Current Gain (IC = 100 mA, VCE = 5.0 Vdc) Both Min. 16 30 3.0 50 Value Typ. - Max. 5 200 Unit Vdc Vdc Vdc mA - DYNAMIC Symbol Test Conditions COB Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Min. - Value Typ. --- Max. 5.5 Unit pF MSC1316.PDF 10-25-99 MRF555 FUNCTIONAL Symbol Test Conditions Power Gain Test Circuit-Figure 1 GPE ...