Infrared Emitting Diodes(GaAlAs)
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
CL-1KL3
DIMENSIONS
The CL-1KL3 is a high-power GaAlAs IRED mounted in...
Description
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
CL-1KL3
DIMENSIONS
The CL-1KL3 is a high-power GaAlAs IRED mounted in a durable, hermetically sealed TO-18 metal can package. The output power is high compared to GaAs IREDs (Po=Typ. 30mW/sr)
(Unit : mm)
FEATURES
¶UHigh-output power ¶UNarrow beam angle ¶U Durable ¶UHigh reliability in demanding environments
APPLICATIONS
¶UOptical emitters ¶UOptical switches ¶U Encoders ¶USmoke sensors
MAXIMUM RATINGS
Item
Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°…) 5
Symbol
VR F I FP I PD Topr. Tstg. Tsol.
Rating
5 100 1 170 -30~+100 -40~+110 260
Unit
V mA A mW °… °… °…
*1. pulse width £∫tw =100 sec.period Ï £∫ T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle
(Ta=2° 5…)
Symbol
VF R I Ct PO Îp ƒÎ °‚Ë
Conditions
F=100mA I VR=5V f=1MHz F=100mA I F=100mA I F=100mA I
Min.
Typ.
1.4 20 30 880 50 °æ 17
Max.
1.7 10
Unit.
V Ï A pF mW/sr nm nm deg.
- 1-
Infrared Emitting Diodes(GaAlAs)
CL-1KL3
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current Vs. Forward voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
- 2-
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