Document
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
CL-1CL3
DIMENSIONS
The CL-1CL3 is a high-power GaAlAs IRED mounted in a 3©™ ceramic package. The output power is so high compared to GaAs IREDs.
(Unit : mm)
FEATURES
¶UCompact (©™ 3mm) ¶UWide beam angle ¶U Low-cost
APPLICATIONS
¶UFloppy disk drives ¶UOptical switches ¶UOptical readers
MAXIMUM RATINGS
Item
Reverse voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°…) 5
Symbol
VR F I FP I PD Topr. Tstg. Tsol.
Rating
4 60 0.5 90 -20~+70 -30~+80 240
Unit
V mA A mW °… °… °…
*1. pulse width £∫tw =100 sec.period •Ï £∫ T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle
(Ta=2° 5…)
Symbol
VF R I Ct PO •Îp •ƒ•Î °‚•Ë
Conditions
F=40mA I VR=4V f=1MHz F=40mA I F=40mA I F=40mA I
Min.
Typ.
20 3.6 880 50 °æ 53
Max.
1.5 10
Unit.
V •Ï A pF mW/sr nm nm deg.
- 1-
Infrared Emitting Diodes(GaAlAs)
CL-1CL3
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current Vs. Forward voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
- 2-
.