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HFD2N65F

600V N-Channel MOSFET

Description

HFD2N65F_HFU2N65F July 2015 HFD2N65F / HFU2N65F 600V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.5 nC (Typ.) Extended Safe Operating Ar...

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