Document
HFD1N60F_HFU1N60F
Sep 2015
HFD1N60F / HFU1N60F
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 1 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.7 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S #9GS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD1N60F
1
2 3
HFU1N60F
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25)*
Power Dissipation (TC = 25) - Derate above 25
600 1.0 0.6 4.0 ρ30 33 1.0 2.8 2.5 28 0.22
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Units V A A A V mJ A mJ W W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 4.53 50 110
Units /W
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HFD1N60F_HFU1N60F
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 0.5 A
2.0 --
Off Characteristics
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125 VGS = ρ30 V, VDS = 0 V
600 ----
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
----
Switching Characteristics
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 300 V, ID = 1.0 A, RG = 25
(Note 4,5)
VDS = 480 V, ID = 1.0 A, VGS = 10 V
(Note 4,5)
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 1.0 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 1.0 A, VGS = 0 V diF/dt = 100 A/ȝV (Note 4)
------
-- 4.0 6.5 8
V
-- -- V -- 10 Ꮃ -- 100 Ꮃ -- ρ100 Ꮂ
160 -26 -6.5 --
Ꮔ Ꮔ Ꮔ
13 -- Ꭸ 17 -- Ꭸ 19 -- Ꭸ 22 -- Ꭸ 3.7 -- nC 0.9 -- nC 1.3 -- nC
-- 1.0 -- 4.0 -- 1.3 181 -0.5 --
A
V Ꭸ ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=59mH, IAS=1.0A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD$GLGW$ȝV9DD%9DSS , Starting TJ =25 qC 4. Pulse Test : Pulse Width ȝV'XW\&\FOH
5. Essentially Independent of Operating Temperature
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HFD1N60F_HFU1N60F
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
R [:], DS(ON)
Drain-Source On-Resistance
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
20
15 VGS = 10V
10
VGS = 20V 5
* Note : T = 25oC J
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I , Drain Current[A]
D
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
300 C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd 250 Crss = Cgd
200 Ciss Coss
150
100 * Note ; 1. VGS = 0 V
Crss 2. f = 1 MHz 50
0 10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12 10 VDS = 120V
VDS = 300V 8 VDS = 480V 6 4 2
* Note : ID = 1.0A 0
01234
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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Capacitances [pF]
HFD1N60F_HFU1N60F
Typical Characteristics (continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
ID, Drain Current [A]
1.2
1.1
1.0
0.9 0.8
-100
Note : 1. VGS = 0 V 2. I = 250PA
D
-50 0 50 100 150
T , Junction Temperature [oC] J
200
Figure 7. Breakdown Voltage Variation vs Temperature
101 Operation in This Area is Limited by R DS(on)
100 Ps
1 ms 100
10 ms
100 ms
DC
10-1
10-2 100
* Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
R , (Normalized) DS(ON)
Drain-Source On-Resistance
ID, Drain Current [A]
2.5
2.0
1.5
1.0
0.5
0.0 -100
Note : 1. VGS = 10 V 2. ID = 0.5 A
-50 0 50 100 150
TJ, J.