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HFC2N60U
600V N-Channel MOSFET
Description
HFC2N60U HFC2N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ7\S#9GS=10V 100% Avalanche Tested November...
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HFC2N60U
600V N-Channel MOSFET
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