C1163

SavantIC Semiconductor Swwiwli.DcaotanSheNet4PU.NcomPower Transistors DESCRIPTION ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Product Specification 2SC1163 Absolute Maximun Ratings (Ta=25? ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25? THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance junction to case VALUE 300 300 4 0.1 20.8 150 -65~150 UNIT V V V A W ? ? VALUE 6.25 UNIT ? /W SavantIC Semiconductor Swwiwli.DcaotanSheNet4PU.NcomPower Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=1.0mA;IB=0 V(BR)CBO Collector-base breakdown voltage IC=100µA;IE=0 V(BR)EBO Emitter-base breakdown voltage IE=100µA;IC=0 VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA VBEsat Base-emitter saturation voltage IC=50mA ;IB=5mA ICBO Collector cut-off current VCB=200V; IE=0 IEBO Emitter cut-off current VEB=3V; IC=0 hFE DC current gain IC=50mA ; VCE=10V Product Specification 2SC1163 MIN TYP. MAX UNIT 300 V 300 V 4V 1.0 V ...