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BUK457-400B Dataheets PDF



Part Number BUK457-400B
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet BUK457-400B DatasheetBUK457-400B Datasheet (PDF)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=400V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK457-400A ID Current-continu.

  BUK457-400B   BUK457-400B


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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=400V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK457-400A ID Current-continuou s@ TC=25℃ BUK457-400B Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 400 V ±30 V 13 A 11 150 W 150 ℃ 150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 60 ℃/W BUK457-400A/B isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUK457-400A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA 400 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=1mA 2.1 RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=6.5A BUK457-400A BUK457-400B IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 4.0 V 0.4 Ω 0.5 Ω ±100 nA IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 20 uA VSD Diode Forward Voltage IF=13A; VGS=0 1.4 V Gfs Forward Transconductance VDS= 25V;ID=6.5A 5.0 S tr Rise time 60 90 ns ton Turn-on time tf Fall time VGS=10V;ID=2.8A;RGS=50Ω 20 40 ns 75 90 ns toff Turn-off time 200 250 ns NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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