BUK453-60B

isc N-Channel MOSFET Transistor BUK453-60A/B DESCRIPTION ·Drain Source Voltage- : VDSS=60V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK453-60A ID Current-continuou s@ TC=25℃ BUK453-60B Ptot Total Dissipation@TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 60 V ±30 V 22 A 20 75 W 175 ℃ 175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 60 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUK453-60A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(th) RDS(on) Gate Threshold Voltage VDS=VGS; ID=1mA Drain-Source On-stage Resistance VGS=10V; ID=10A BUK453-60A BUK453-60B IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=60V; VGS= 0 VSD Diode Forward Voltage IF=22A; VGS=0 Gfs Forward Transconductance VDS= 25V；ID=10A tr Rise time ton Turn-on time tf Fall time VGS=10...