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BUJ302A

Part Number	BUJ302A
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 26, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUJ302A DESCRIPTION ·High Voltage ·H...
Datasheet	BUJ302A PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUJ302A DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Desined for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 2A ICM Collector Current-Peak 3A IB Base Current 0.
75 A IBM Base Current-Peak Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 1 50 15...

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