BU2527AW

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 8 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 125 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W BU2527AW isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A ;IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current hFE-1 DC Current Gain IC= 6A ;IB= 1.2A VCE=1500V,VBE=0 VCE=1500V,VBE=0;TC=125℃ IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 6A ; VCE= 5V COB Output Capacitanc...