BT169D

isc Thyristors BT169D FEATURES ·With TO-92 package ·Sensitive gate trigger current ·Low reverse and forward blocking current ·Low holding current ·For general purpose switching and phase control applications. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(AV) Average on-state current IT(RMS) RMS on-state current PGM Peak gate power PG(AV) Average gate power ITSM Non-repetitive peak on-state current Tj Operating junction temperature Tstg Storage temperature MIN 400 400 0.5 0.8 2 0.1 8 125 -40~+ 150 UNIT V V A A W W A ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS VDRM Repetitive peak off-state voltage ID=0.1mA VRRM Repetitive peak reverse voltage ID=0.5mA IRRM Repetitive peak reverse current VRRM=400V IDRM Repetitive peak off-state current VDRM=400V IGT Gate trigger current VD= 12V; IT= 10mA VTM On-state voltage IT=1A IH Holding current IGT=0.5mA ,VD=12V VGT Gate trigger voltage VD= 12V; IT= 10mA MIN MAX UNIT 400 V 400 V 10 μA 10 μA 200 μA 1.35 V 5 mA 0.8 V isc website：www.iscsemi.com isc & iscsemi is registered trademark NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicatio...