isc Silicon NPN Power Transistor
BDY13-6
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Coll...
isc Silicon
NPN Power
Transistor
BDY13-6
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1V(Max)@ IC = 3A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IB
Base Current
0.3
A
PC
Collector Power Dissipation@TC=45℃
26
W
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature
-65~125 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5
℃/W
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isc Silicon
NPN Power
Transistors
BDY13-6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
80
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 100uA; IE= 0
60
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
1
V
VBE(sat) Base-Emitter Saturation Voltage
IC=3A; IB= 0.3A
1.3
V
ICES
Collector Cutoff Current
VCE= 60V; VBE= 0
1.0
uA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
1.0
uA
hFE1
DC Current Gain
IC= 0.01A; VCE= 1V
55
hFE2
DC Curre...