Document
isc Silicon PNP Darlington Power Transistors
BDT60/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C
·Complement to Type BDT61/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BDT60
-60
VCBO
Collector-Base Voltage
BDT60A
-80
V
BDT60B
-100
BDT60C
-120
BDT60
-60
VCEO
Collector-Emitter Voltage
BDT60A
-80
V
BDT60B
-100
BDT60C
-120
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃ Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
-0.1
A
2 W
50
150
℃
Tstg
Storage Ttemperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150 MAX
Rth j-c Thermal Resistance,Junction to Case
2.5
Rth j-c Thermal Resistance,Junction to Ambient 62.5
℃
UNIT ℃/W ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistors
BDT60/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDT60
-60
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT60A BDT60B
IC= -30mA; IB= 0
-80 -100
V
VCE(sat) VBE(on)
ICBO
BDT60C
Collector-Emitter Voltage
Saturation
Base-Emitter On Voltage
BDT60
Collector Cutoff Current
BDT60A BDT60B
BDT60C BDT60
IC= -1.5A; IB= -6mA
IC= -1.5A ; VCE= -3V
VCB= -60V; IE= 0 VCB= -30V; IE= 0; TJ=150℃ VCB= -80V; IE= 0 VCB= -40V; IE= 0; TJ=150℃ VCB= -100V; IE= 0 VCB= -50V; IE= 0; TJ=150℃ VCB= -120V; IE= 0 VCB= -60V; IE= 0; TJ=150℃
VCE= -30V; IB= 0
-120
-2.5 V
-2.5 V
-0.2 -2.0
-0.2
-2.0 -0.2
mA
-2.0
-0.2 -2.0
-0.5
ICEO
Collector Cutoff Current
BDT60A BDT60B
VCE= -40V; IB= 0 VCE= -50V; IB= 0
-0.5 mA
-0.5
BDT60C VCE= -60V; IB= 0
-0.5
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5 mA
hFE
DC Current Gain
IC= -1.5A; VCE= -3V
750
VECF
C-E Diode Forward Voltage
IE= -1.5A
-2.0 V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -2A; IB1= -IB2= -8mA; VBE(off)= 5V; RL= 20Ω
1.0
μs
4.5
μs
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warrant.