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BDT60A Dataheets PDF



Part Number BDT60A
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistor
Datasheet BDT60A DatasheetBDT60A Datasheet (PDF)

isc Silicon PNP Darlington Power Transistors BDT60/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE.

  BDT60A   BDT60A



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isc Silicon PNP Darlington Power Transistors BDT60/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT60 -60 VCBO Collector-Base Voltage BDT60A -80 V BDT60B -100 BDT60C -120 BDT60 -60 VCEO Collector-Emitter Voltage BDT60A -80 V BDT60B -100 BDT60C -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.1 A 2 W 50 150 ℃ Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 MAX Rth j-c Thermal Resistance,Junction to Case 2.5 Rth j-c Thermal Resistance,Junction to Ambient 62.5 ℃ UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistors BDT60/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT60 -60 V(BR)CEO Collector-Emitter Breakdown Voltage BDT60A BDT60B IC= -30mA; IB= 0 -80 -100 V VCE(sat) VBE(on) ICBO BDT60C Collector-Emitter Voltage Saturation Base-Emitter On Voltage BDT60 Collector Cutoff Current BDT60A BDT60B BDT60C BDT60 IC= -1.5A; IB= -6mA IC= -1.5A ; VCE= -3V VCB= -60V; IE= 0 VCB= -30V; IE= 0; TJ=150℃ VCB= -80V; IE= 0 VCB= -40V; IE= 0; TJ=150℃ VCB= -100V; IE= 0 VCB= -50V; IE= 0; TJ=150℃ VCB= -120V; IE= 0 VCB= -60V; IE= 0; TJ=150℃ VCE= -30V; IB= 0 -120 -2.5 V -2.5 V -0.2 -2.0 -0.2 -2.0 -0.2 mA -2.0 -0.2 -2.0 -0.5 ICEO Collector Cutoff Current BDT60A BDT60B VCE= -40V; IB= 0 VCE= -50V; IB= 0 -0.5 mA -0.5 BDT60C VCE= -60V; IB= 0 -0.5 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE DC Current Gain IC= -1.5A; VCE= -3V 750 VECF C-E Diode Forward Voltage IE= -1.5A -2.0 V Switching Times ton Turn-On Time toff Turn-Off Time IC= -2A; IB1= -IB2= -8mA; VBE(off)= 5V; RL= 20Ω 1.0 μs 4.5 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warrant.


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