BD956

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= -500mA ·Complement to Type BD955 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W BD956 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD956 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -4V ICBO Collector Cutoff Current ICEO Collector Cutoff Current VCB= -120V; IE= 0 VCB= -60V; IE= 0,TJ=150...