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BD951F Dataheets PDF



Part Number BD951F
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet BD951F DatasheetBD951F Datasheet (PDF)

isc Silicon NPN Power Transistor BD949F/951F/953F/955F DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950F/952F/954F/956F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD949F 60 BD951F 80 VCBO Collector-Base Voltage V BD953F 100 BD955F 120 BD949F 60 BD951F 80 VCEO Collector-.

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isc Silicon NPN Power Transistor BD949F/951F/953F/955F DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950F/952F/954F/956F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD949F 60 BD951F 80 VCBO Collector-Base Voltage V BD953F 100 BD955F 120 BD949F 60 BD951F 80 VCEO Collector-Emitter Voltage V BD953F 100 BD955F 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 22 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 8.12 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD949F/951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD949F VCEO(SUS) Collector-Emitter Sustaining Voltage BD951F BD953F IC= 30mA ; IB= 0 BD955F VCE(sat) VBE(on) ICBO ICEO Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current IC= 2A; VCE= 4V VCB= VCBOmax; IE= 0 VCB= 1/2VCBOmax; IE= 0,TJ=150℃ VCE= VCEOmax; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 500mA ; VCE= 4V hFE-2 DC Current Gain IC= 2A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 500mA ; VCE= 4V MIN TYP. MAX UNIT 60 80 V 100 120 1.0 V 1.4 V 0.05 1 mA 0.1 mA 0.2 mA 40 20 3 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


BD949F BD951F BD953F


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