STK0765BP

Semiconductor STK0765BP Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=650V(tin.) Low Crss : Crss=13pF(Typ.) Low gate charge : Qg=32nC(Typ.) Low RDS(on) :RDS(on)=1.2Ω(Typ.) Ordering Information Type NO. STK0765BP Marking STK0765 Package Code TO-220AB-3L Outline Dimensions unit : mm ഍3.70 Max. 9.80~10.20 8.20~8.60 4.35~4.65 1.20~1.40 3.00° 9.05~9.35 6.30~6.70 12.68~13.48 1.49~1.59 0.95~1.05 1.62 Max. 1.37 Max. 0.95 Max. 2.54 Typ. 5.08 Typ. 9.85~10.15 KSD-T0P014-000 9.85~10.15 2.20~2.60 0.40~0.60 PIN Connections 1. Gate 2. Drain 3. Source 1 2.35~2.45 STK0765BP Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) ྚ ྚ ྙ Repetitive avalanche energy ྙ Junction temperature Storage temperature range * Limited by maximum junction temperature Symbol VDSS VGSS (Tc=25୅) ID (Tc=100୅) IDM PD IAS EAS IAR EAR TJ Tstg Rating 650 ±30 7 4.4 28 100 7 420 7 14.7 150 -55~150 Thermal resistance Characteristic Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 1.25 83.3 (Tc=25°C) Unit V V A A A W A mJ A mJ °C Unit ୅/W KSD-T0P014-000 2 STK0765BP Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance ྜ...