MTB2D5N03BQ8

CYStech Electronics Corp. Spec. No. : C998Q8 Issued Date : 2015.12.16 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB2D5N03BQ8 Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-free package BVDSS ID@ TA=25°C, VGS=10V ID@ TC=25°C, VGS=10V RDSON@VGS=10V, ID=19A RDSON@VGS=4.5V, ID=15A 30V 21A 30A 2.7mΩ(typ) 3.6mΩ(typ) Symbol MTB2D5N03BQ8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTB2D5N03BQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB2D5N03BQ8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.5mH, ID=30A, VDD=20V Repetitive Avalanche Energy @ L=0.05mH TA=25℃ Total Power Dissipation TA=70℃ TC=25℃ TC=100℃ Operating Junction and Storage Temperature Range Symbol VDS VGS IDSM ID IDM IAS EAS EAR PDSM PD Tj, Tstg Spec. No. :...