MMBT2222A

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor MMBT2222A Spec. No. : C203N3 Issued Date : 2002.05.11 Revised Date : 2010.11.12 Page No. : 1/8 Description The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High IC(Max), IC(Max) = 0.6A. Low VCE(sat) , Typ. VCE(sat) = 0.2V at IC/IB = 500mA/50mA. Optimal for low Voltage operation. Complementary to MMBT2907A. Pb-free package Symbol MMBT2222A Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating Junction Temperature Range Storage Temperature Note : Free air condition MMBT2222A Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Limits 75 50 6 0.6 225 (Note) 560 556 (Note) 223 -55~+150 -55~+150 Unit V V V A mW mW °C/W °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C203N3 Issued Date : 2002.05.11 Revised Date : 2010.11.12 Page No. : 2/8 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat) 2 *VCE(sat)3 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 75 50 6 0.7 85 90 95 100 40 - Typ. 0.2 230 9.3 Max. 10 10 10 0.5 0.25 0.45 1.0 1.2 300 - Unit V V V nA nA nA V V V V V MHz pF Test Condi...