HBNP5213N6

CYStech Electronics Corp. NPN AND PNP Dual Epitaxial Planar Transistors HBNP5213N6 Spec. No. : C627N6 Issued Date : 2013.10.17 Revised Date : Page No. : 1/8 Features High BVCEO High current Excellent DC current gain characteristics Pb-free lead plating and halogen-free package Equivalent Circuit HBNP5213N6 Outline SOT-23-6L C2 E1 C1 B : Base E : Emitter C : Collector B2 E2 B1 Ordering Information Device HBNP5213N6-0-T1-G Package SOT-23-6L (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name HBNP5213N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C627N6 Issued Date : 2013.10.17 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) (Note 1) Peak Collector Current (Note 2) Peak Base Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol VCBO VCEO VEBO IC ICP IBP Pd Tj, Tstg Rth,ja Limits NPN PNP 100 -100 80 -80 7 -7 1 -1 2 -2 200 -200 1.14 0.01 -55~+150 110 Unit V V V A A mA W W / °C °C °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-...