MBNP2026G6

CYStech Electronics Corp. Spec. No. : C197G6 Issued Date : 2011.01.20 Revised Date : Page No. : 1/10 N- Channel Enhancement mode MOSFET AND PNP BJT Complex Device MBNP2026G6 Description The MBNP2026G6 consists of a N-channel enhancement-mode MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications. Features Simple drive requirement Low gate charge Low on-resistance Fast switching speed Pb-free package Equivalent Circuit MBNP2026G6 Outline TSOP-6 C2 S1 D1 G：Gate B : Base S：Source E : Emitter D：Drain C : Collector B2 E2 G1 MBNP2026G6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C197G6 Issued Date : 2011.01.20 Revised Date : Page No. : 2/10 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Collector Current(DC) (Note 1) Peak Collector Current (Note 2) Peak Base Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol BVDSS VGS VCBO VCEO VEBO ID IDM IC ICM IBM Pd Tj, Tstg Rth,ja Limits N-channel PN...