2N5415

INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·PNP high-voltage transistor ·Low current (max. 200 mA) ·High voltage (max. 300 V) isc Product Specification 2N5415 APPLICATIONS ·Designed for Switching and linear amplification in military, industrial and consumer equipment applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 4V IC Collector Current-Continuous 0.2 A ICM Peak Collector Current 0.4 A IBM Peak Base cCurrent Collector Power Dissipation @ Ta<50℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 1.0 W 10 200 ℃ Tstg Storage Temperature Range -60~200 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N5415 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA ICBO Collector Cutoff Current VCB= 175V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain VEB= 4V; IC= 0 IC= 50mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V MIN TYP. MAX UNIT 0.5 V 50 μA 20 μA 30 150 15 MHz isc website：www.iscsemi.cn 2 ...