INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector Current- IC= 0.8A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min)
APPLICATIONS ·Designed for general-purpose switching and linear
amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO VEBO
Collector-Emitter Voltage Emi...