K2613

www.DataSheet4U.com 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Unit: mm · Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) · High forward transfer admittance: ïYfsï = 6.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) · Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 1000 1000 ±30 8 24 150 910 8 15 150 -55~150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURSE JEDEC ― JEITA ― TOSHIBA 2−16C1B Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch-c) Rth (ch-a) 0.833 50 °C/W °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = 26.3 mH, RG = 25 W, IAR = 8 A Note 3: Repetitive rating: Pulse width limited by max junction temperature This transistor is an electrostatic sensitive device. Please handle with cauti...