BC807A

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BC817A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -50 -45 Emitter-Base Voltage VEBO -5 Collector Current IC -500 Emitter Current IE 500 Collector Power Dissipation PC* 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Package Mounted On 99.9% Alumina 10 8 0.6mm. UNIT V V V mA mA mW BC807A EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT VCB=-20V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-500mA IC=-500mA, IB=-50mA VCE=-1V, IC=-500mA VCE=-5V, IC=-10mA, f=100MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Note : hFE Classification 16:100 250 , 25:160 400 , 40:250 630 MARK SPEC TYPE. MARK BC807A-16 1M BC807A-25 1N BC807A-40 1P Marking Type Name MIN. - 100 40 80 - TYP. 9 MAX. -0.1 -0.1 630 -0.7 -1.2 -...