Document
SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY AMPLIFIER APPLICATIONS.
FEATURE Complementary to MMBTA06
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-80
Collector-Emitter Voltage
VCEO
-80
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -500
Emitter Current
IE 500
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature
Tstg -55 150
* : Package Mounted On 99.5% Alumina 10 8 0.6mm.
UNIT V V V mA mA mW
MMBTA56
EPITAXIAL PLANAR PNP TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23
Marking
ANXType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance
ICBO ICEO V(BR)CEO hFE(1) hFE(2) VCE(sat) VBE fT Cob
TEST CONDITION VCB=-80V, IE=0 VCE=-60V, IB=0 IC=-1mA, IB=0 VCE=-1V, IC=-10mA VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-1V, IC=-100mA VCB=-10V, IE=0, f=1MHz
MIN. -80
100 100
50 -
TYP. 14
MAX. -100 -100
-0.25 -1.2 -
UNIT nA nA V
V V MHz pF
2005. 11. 14
Revision No : 3
1/2
MMBTA56
2005. 11. 14
Revision No : 3
2/2
.