MMBTA06

SEMICONDUCTOR TECHNICAL DATA DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. FEATURE Complementary to MMBTA56. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC * Tj 80 80 6 500 -500 350 150 Storage Temperature Tstg -55 150 * : Package Mounted On 99.5% Alumina 10 8 0.6mm. UNIT V V V mA mA mW MMBTA06 EPITAXIAL PLANAR NPN TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking ADXType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO ICEO V(BR)CEO hFE(1) hFE(2) VCE(sat) VBE fT TEST CONDITION VCB=80V, IE=0 VCE=60V, IB=0 IC=1mA, IB=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA MIN. 80 100 100 100 TYP. - MAX. 100 100 0.25 1.2 - UNIT nA nA V V V MHz 2003. 7. 21 Revision No : 3 1/2 COLLECTOR CURRENT IC (mA) MMBTA06 I C - VCE 400 53 300 2 COMMON EMITTER Ta=25 C 200 1 100...