KN2907S

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=150mA, IB=-15mA. Complementary to the KN2222S/2222AS. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KN2907S KN2907AS Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 -60 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Collector Power Dissipation (Ta=25 ) PC PC * 150 mW 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On 99.5% Alumina 10 8 0.6 ) KN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking Type Name ZDA Lot No. ZHAType Name Lot No. MARK SPEC TYPE KN2907S KN2907AS MARK ZDA ZHA 2002. 6. 25 Revision No : 3 1/3 KN2907S/AS ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICEX Collector Cut-off Current KN2907S KN2907AS ICBO Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter * Breakdown Voltage KN2907S KN2907AS V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO KN2907S KN2907AS hFE(1) KN2907S KN2907AS hFE(2) DC...