Document
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. Complementary to TIP36C. Icmax:25A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25 ) Junction Temperature
VCBO VCEO VEBO
IC IB
PC
Tj
Storage Temperature Range
Tstg
RATING 100 100 5 25 5.0
125
150 -55 150
UNIT V V V A A
W
E
TIP35C
TRIPLE DIFFUSED NPN TRANSISTOR
AQ
B K
F I
J GH
C
D
d PP
L
T
1 23
1. BASE 2. COLLECTOR 3. EMITTER
DIM MILLIMETERS
A 15.9 MAX
B 4.8 MAX C 20.0+_ 0.3 D 2.0+_ 0.3
d 1.0+0.3/-0.25
E 2.0
F 1.0
G 3.3 MAX
H 9.0
I 4.5
MJ
2.0
K 1.8 MAX L 20.5+_ 0.5
M 2.8
P 5.45+_ 0.2
Q Φ3.2+_ 0.2
T 0.6+0.3/-0.1
TO-3P(N)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Emitter Cut-off Current Collector-emitter Breakdown Voltage DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Voltage
ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat)(1) VCE(sat)(2) VBE
Transition Frequency
fT
Note : hFE(1) Classification R:55~110, O:80~160
TEST CONDITION VCB=100V, IE=0 VEB=5V, IC=0 IC=50mA, IB=0 VCE=5V, IC=1.5A VCE=4V, IC=15A IC=15A, IB=1.5A IC=25A, IB=5.0A VCE=5V, IC=5A VCE=5V, IC=1A
MIN. -
100 55 15 3.0
TYP. -
MAX. 10 10 160 1.8 4.0 1.5 -
UNIT A A V
V V MHz
2001. 1. 18
Revision No : 3
1/2
TIP35C
2001. 1. 18
Revision No : 3
2/2
.