BC560

SEMICONDUCTOR TECHNICAL DATA LOW NOISE APPLICATION. FEATURE For Complementary with NPN Type BC549/550. BC559/560 EPITAXIAL PLANAR PNP TRANSISTOR BC JA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage BC559 BC560 BC559 Collector-Emitter Voltage BC560 Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING -30 -50 -30 -45 -5 -100 625 150 -55 150 UNIT V V V mA mW L M C KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector-Emitter Breakdown Voltage BC559 BC560 V(BR)CEO IC=-10mA, IB=0 Collector-Base Breakdown Voltage BC559 BC560 V(BR)CBO IC=-10 A, IE=0 Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 Collector Cut-off Current ICBO VCB=-30V, IE=0 DC Current Gain hFE IC=-2mA, VCE=-5V Base-Emitter Voltage VBE(ON) IC=-2mA, VCE=-5V Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-5mA Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-5mA Transition Frequency fT IC=-10mA, VCE=-5V, f=100MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Noise Figure NF IC=-200 A, VCE=-5V Rg=10k , f=1kHz Note : hFE Classification A:110 220, B:200 450, C:420 800 MIN. -30 -45 -30 -50 -5.0 110 -0.55...