BC337

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=800mA. DC Current Gain : hFE=100 630 (VCE=1V, Ic=100mA). For Complementary with PNP type BC327. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE PC Tj Tstg RATING 50 45 5 800 -800 625 150 -55 150 UNIT V V V mA mA mW L M C BC337 EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. COLLECTOR 2. BASE 3. EMITTER TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO hFE VCE(sat) VBE(ON) fT VCB=45V, IE=0 VCE=1V, IC=100mA IC=500mA, IB=50mA VCE=1V, IC=300mA VCE=5V, IC=10mA, f=100MHz Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 Note : hFE Classification none:100 630, 16:100 250, 25:160 400, 40:250 630 MIN. - 100 - TYP. - 100 16 MAX. 100 630 0.7 1.2 - UNIT nA V V MHz pF 2000. 2. 28 Revision No : 2 1/2 BC337 2000. 2. 28 Revision No : 2 2/2 ...