MTN1012C3

CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET MTN1012C3 BVDSS ID RDSON@VGS=4.5V, ID=600mA RDSON@VGS=2.5V,ID=400mA RDSON@VGS=1.8V,ID=350mA Features Simple drive requirement Small package outline Pb-free package 20V 560mA 320mΩ(typ) 510mΩ(typ) 980mΩ(typ) Symbol MTN1012C3 Outline SOT-523 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=85°C, VGS=4.5V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation (Note 3) TA=25℃ TA=85℃ ESD susceptibility Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on FR-4 board. 3. Human body model, 1.5kΩ in series with 100pF Limits 20 ±8 560 400 2.5 150 80 2000 (Note 4) -55~+150 Unit V mA A mW V °C MTN1012C3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 2/8 Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Rth,ja Limit 833 Unit °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS 20 0.5 - - *RDS(ON) - *GFS...