MTP4435BV8

CYStech Electronics Corp. Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTP4435BV8 BVDSS ID@ VGS=-10V, TA=25°C ID@ VGS=-10V, TC=25°C RDSON@VGS=-10V, ID=-10A Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating package RDSON@VGS=-5V, ID=-7A -30V -10.5A -32.4A 12.6mΩ(typ.) 16.9mΩ(typ.) Equivalent Circuit MTP4435BV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device Package Shipping MTP4435BV8-0-T6-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTP4435BV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=-10V Continuous Drain Current @ TC=100°C, VGS=-10V Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1mH, ID=-12A, VDD=-15V Repetitive Avalanche Energy @ L=0.05mH TC=25℃ Total Power Dissipation TC=100℃ TA=25℃ TA=70℃ Operating Junction and Storage Temperature Ran...