P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP4435Q8
Spec. No. : C391Q8 Issued Date : 2007.06.08...
Description
CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP4435Q8
Spec. No. : C391Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 1/6
Description
The MTP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
RDS(ON)=20mΩ@VGS=-10V, ID=-8A RDS(ON)=35mΩ@VGS=-4.5V, ID=-5A Simple drive requirement Low on-resistance Fast switching speed Pb-free package
Equivalent Circuit
MTP4435Q8
Outline
SOP-8
G:Gate S:Source D:Drain
MTP4435Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C391Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=70 °C Pulsed Drain Current (Note 1)
Total Power Dissipation @ TA=25 °C Linear Derating Factor
Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient
Note : 1.Pulse width limited by maximum junction temperature.
Symbol BVDSS
VGS ID ID IDM Pd
Tj Tstg Rth,j-a
Limits
-30 ±20 -8 -6 -50 2.5 0.02 -55~+150 -55~+150 50
Unit
V V A A A W W / °C °C °C °C/W
Electrical Characteristics (Tj=25°C, unless otherwise speci...
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