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MTP4435Q8

CYStech Electronics

P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4435Q8 Spec. No. : C391Q8 Issued Date : 2007.06.08...


CYStech Electronics

MTP4435Q8

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CYStech Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4435Q8 Spec. No. : C391Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 1/6 Description The MTP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features RDS(ON)=20mΩ@VGS=-10V, ID=-8A RDS(ON)=35mΩ@VGS=-4.5V, ID=-5A Simple drive requirement Low on-resistance Fast switching speed Pb-free package Equivalent Circuit MTP4435Q8 Outline SOP-8 G:Gate S:Source D:Drain MTP4435Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C391Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=70 °C Pulsed Drain Current (Note 1) Total Power Dissipation @ TA=25 °C Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient Note : 1.Pulse width limited by maximum junction temperature. Symbol BVDSS VGS ID ID IDM Pd Tj Tstg Rth,j-a Limits -30 ±20 -8 -6 -50 2.5 0.02 -55~+150 -55~+150 50 Unit V V A A A W W / °C °C °C °C/W Electrical Characteristics (Tj=25°C, unless otherwise speci...




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