P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C808Q8 Issued Date : 2012.04.03 Revised Date : 2012.11.02 Page No. : 1/9
P-CHANN...
Description
CYStech Electronics Corp.
Spec. No. : C808Q8 Issued Date : 2012.04.03 Revised Date : 2012.11.02 Page No. : 1/9
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP4409Q8
BVDSS ID
RDSON@VGS=-10V, ID=-15A
RDSON@VGS=-4.5V, ID=-10A
-30V -15A 7.7mΩ(typ)
11.4mΩ(typ)
Description
The MTP4409Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
Simple drive requirement Low on-resistance Fast switching speed Pb-free and Halogen-free package
Equivalent Circuit
MTP4409Q8
Outline
SOP-8
G:Gate S:Source D:Drain
MTP4409Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C808Q8 Issued Date : 2012.04.03 Revised Date : 2012.11.02 Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C
Continuous Drain Current @TA=100 °C Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=-15A, RG=25Ω
Power Dissipation (Note 2)
TA=25 °C TA=100 °C
Operating Junction and Storage Temperature Range
Symbol BVDSS
VGS ID ID IDM IAS EAS
PD
Tj ; Tstg
Limits
-30 ±20 -15 -9.5 -160 -15 11.25 3.1 1.2 -55~+150
Note : 1.Pulse width limited by maxim...
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